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RUF015N02
Transistors
1.8V Drive Nch MOSFET
RUF015N02
Structure
Silicon N-channel MOSFET
Dimensions (Unit : mm)
TUMT3
Features
1) Low On-resistance.
2) Space saving , small surface mount package (TUMT3).
3) Low voltage drive (1.8V drive).
(1) Gate
Applications
Switching
Packaging specifications
Package
Taping
(2) Source
(3) Drain
Inner circuit
Abbreviated symbol : PS
(3)
Type
Code
Basic ordering unit (pieces)
TL
3000
RUF015N02
(1)
? 1
? 2
Absolute maximum ratings (Ta=25 ° C)
(2)
? 1 ESD PROTECTION DIODE
? 2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
Parameter
Drain-source voltage
Gate-source voltage
Symbol
V DSS
V GSS
Limits
20
10
Unit
V
V
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of storage temperature
Continuous
Pulsed
Continuous
Pulsed
I D
I DP ? 1
I S
I SP ? 1
P D ? 2
Tch
Tstg
± 1.5
± 3.0
0.6
2.4
0.8
150
? 55 to + 150
A
A
A
A
W
° C
° C
? 1 Pw ≤ 10 μ s, Duty cycle ≤ 1%
? 2 Mounted on a ceramic board
Thermal resistance
Parameter
Channel to ambient
Symbol
Rth(ch-a) ?
Limits
156
Unit
° C/W
? Mounted on a ceramic board
1/3
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